Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
Identifieur interne : 004077 ( Main/Repository ); précédent : 004076; suivant : 004078Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
Auteurs : RBID : Pascal:10-0464204Descripteurs français
- Pascal (Inist)
- Mécanisme croissance, Semiconducteur III-V, Composé III-V, Epitaxie jet moléculaire, Ammoniac, Précurseur, Propriété optique, Propriété électrique, Face cristalline, Propriété symétrie, Dislocation filetée, Densité dislocation, Microscopie électronique transmission, Transistor mobilité électron élevée, Nitrure de gallium, Silicium, Nitrure d'indium, Diode électroluminescente, Dispositif optoélectronique, Hétérostructure, GaN, Si, NH3, AlGaN, InGaN, 8110A, 8115H, 7820, 6150A.
English descriptors
- KwdEn :
- Ammonia, Crystal faces, Dislocation density, Electrical properties, Gallium nitride, Growth mechanism, Heterostructures, High electron mobility transistors, III-V compound, III-V semiconductors, Indium nitride, Light emitting diodes, Molecular beam epitaxy, Optical properties, Optoelectronic devices, Precursor, Silicon, Symmetry property, Threading dislocation, Transmission electron microscopy.
Abstract
The growth of GaN based structures on Si(1 1 0) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical and electrical properties of such structures are assessed and are quite similar to the ones obtained on Si(1 1 1) in-spite of the very different substrate surface symmetry. A threading dislocation density of 3.7 × 109 cm-2 is evaluated by transmission electron microscopy, which is in the low range of typical densities obtained on up to 2 μm thick GaN structures grown on Si(1 1 1). To assess the potential of such structure for device realization, AlGaN/GaN high electron mobility transistor and InGaN/GaN light emitting diode heterostructures were grown and their properties are compared with the ones obtained on Si(1 1 1).
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Gregory, Parc de Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Physics Department, University of Nice-Sophia Antipolis</s1><s2>06103 Nice</s2><s3>FRA</s3><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Nice</settlement></placeName></affiliation></author><author><name sortKey="Nemoz, M" uniqKey="Nemoz M">M. Nemoz</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CRHEA-CNRS, rue B. Gregory, Parc de Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author><author><name sortKey="Chenot, S" uniqKey="Chenot S">S. Chenot</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CRHEA-CNRS, rue B. Gregory, Parc de Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author><author><name sortKey="Datnilano, B" uniqKey="Datnilano B">B. Datnilano</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CRHEA-CNRS, rue B. Gregory, Parc de Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author><author><name sortKey="Semond, F" uniqKey="Semond F">F. Semond</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CRHEA-CNRS, rue B. Gregory, Parc de Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0464204</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0464204 INIST</idno><idno type="RBID">Pascal:10-0464204</idno><idno type="wicri:Area/Main/Corpus">003C32</idno><idno type="wicri:Area/Main/Repository">004077</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ammonia</term><term>Crystal faces</term><term>Dislocation density</term><term>Electrical properties</term><term>Gallium nitride</term><term>Growth mechanism</term><term>Heterostructures</term><term>High electron mobility transistors</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium nitride</term><term>Light emitting diodes</term><term>Molecular beam epitaxy</term><term>Optical properties</term><term>Optoelectronic devices</term><term>Precursor</term><term>Silicon</term><term>Symmetry property</term><term>Threading dislocation</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Mécanisme croissance</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Epitaxie jet moléculaire</term><term>Ammoniac</term><term>Précurseur</term><term>Propriété optique</term><term>Propriété électrique</term><term>Face cristalline</term><term>Propriété symétrie</term><term>Dislocation filetée</term><term>Densité dislocation</term><term>Microscopie électronique transmission</term><term>Transistor mobilité électron élevée</term><term>Nitrure de gallium</term><term>Silicium</term><term>Nitrure d'indium</term><term>Diode électroluminescente</term><term>Dispositif optoélectronique</term><term>Hétérostructure</term><term>GaN</term><term>Si</term><term>NH3</term><term>AlGaN</term><term>InGaN</term><term>8110A</term><term>8115H</term><term>7820</term><term>6150A</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The growth of GaN based structures on Si(1 1 0) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical and electrical properties of such structures are assessed and are quite similar to the ones obtained on Si(1 1 1) in-spite of the very different substrate surface symmetry. A threading dislocation density of 3.7 × 10<sup>9</sup> cm<sup>-2</sup> is evaluated by transmission electron microscopy, which is in the low range of typical densities obtained on up to 2 μm thick GaN structures grown on Si(1 1 1). To assess the potential of such structure for device realization, AlGaN/GaN high electron mobility transistor and InGaN/GaN light emitting diode heterostructures were grown and their properties are compared with the ones obtained on Si(1 1 1).</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>312</s2></fA05><fA06><s2>19</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>CORDIER (Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>MORENO (J.-C.)</s1></fA11><fA11 i1="03" i2="1"><s1>BARON (N.)</s1></fA11><fA11 i1="04" i2="1"><s1>FRAYSSINET (E.)</s1></fA11><fA11 i1="05" i2="1"><s1>CHAUVEAU (J.-M.)</s1></fA11><fA11 i1="06" i2="1"><s1>NEMOZ (M.)</s1></fA11><fA11 i1="07" i2="1"><s1>CHENOT (S.)</s1></fA11><fA11 i1="08" i2="1"><s1>DATNILANO (B.)</s1></fA11><fA11 i1="09" i2="1"><s1>SEMOND (F.)</s1></fA11><fA14 i1="01"><s1>CRHEA-CNRS, rue B. Gregory, Parc de Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Picogiga International, Place Marcel Rebuffat</s1><s2>91971 Courtaboeuf</s2><s3>FRA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Physics Department, University of Nice-Sophia Antipolis</s1><s2>06103 Nice</s2><s3>FRA</s3><sZ>5 aut.</sZ></fA14><fA20><s1>2683-2688</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000192679060090</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0464204</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The growth of GaN based structures on Si(1 1 0) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical and electrical properties of such structures are assessed and are quite similar to the ones obtained on Si(1 1 1) in-spite of the very different substrate surface symmetry. A threading dislocation density of 3.7 × 10<sup>9</sup> cm<sup>-2</sup> is evaluated by transmission electron microscopy, which is in the low range of typical densities obtained on up to 2 μm thick GaN structures grown on Si(1 1 1). To assess the potential of such structure for device realization, AlGaN/GaN high electron mobility transistor and InGaN/GaN light emitting diode heterostructures were grown and their properties are compared with the ones obtained on Si(1 1 1).</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H20</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A50A</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Composé III-V</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>III-V compound</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Ammoniac</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Ammonia</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Précurseur</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Precursor</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Propriété optique</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Optical properties</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Electrical properties</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Face cristalline</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Crystal faces</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Propriété symétrie</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Symmetry property</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Propiedad simetría</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Dislocation filetée</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Threading dislocation</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Dislocación aterrajada</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Densité dislocation</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Dislocation density</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Transistor mobilité électron élevée</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>High electron mobility transistors</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Indium nitride</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Diode électroluminescente</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Light emitting diodes</s0><s5>29</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0><s5>30</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Optoelectronic devices</s0><s5>30</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>31</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Heterostructures</s0><s5>31</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Si</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>NH3</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>AlGaN</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>50</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8115H</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>7820</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>6150A</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>305</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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